Mg dopantinCu2SnSe3: Ann-typeformerandapromoterofelectrical mobility upto387cm2 V 1 s 1

dc.contributor.author	Hau Kuo, Dong-
dc.contributor.author	Wubet, Walelign
dc.date.accessioned	2019-03-04T07:00:41Z
dc.date.available	2019-03-04T07:00:41Z
dc.date.issued	2014-07-16
dc.identifier.uri	http://hdl.handle.net/123456789/1999
dc.description.abstract	Mg-doped Cu2SnSe3 bulk materialswiththe(Cu2 xMgx)SnSe3 (Mg-x-CTSe) formulaat x¼0, 0.05,0.1, 0.15,and0.2werepreparedat550 1C for2hwithsolublesinteringaidsofSb2S3 and Te.Defectchemistry wasstudiedbymeasuringstructuralandelectricalpropertiesofMg-dopedCu2SnSe3 as afunctionof dopant concentration.Mg-x-CTSe pelletsshowp-typeat x¼0, 0.05and0.1andn-typeat x¼0.15and0.2. The lowholeconcentrationof3.2 1017 cm 3 and highmobilityof387cm2 V 1 s 1 wereobtainedfor (Cu2 xMgx)SnSe3 bulksat x¼0.1(5%Mg)ascomparedto2.2 1018 cm 3 and 91cm2 V 1 s 1 for the undoped one.TheexplanationbasedupontheMg-to-Cuantisitedonordefectforthechangesin electrical propertywasdeclared.AhighMgcontentforMg-x-CTSe at xZ0.1canleadtotheformationof second phases.ThestudyinbulkMg-x-CTSe hasbeenbasedupondefectstatesandisconsistentand supported bythedataofstructuralandelectricalproperties.	en_US
dc.language.iso	en	en_US
dc.subject	Keywords: Cu2SnSe3 Reactivesintering Microstructure Electrical property Extrinsic defect	en_US
dc.title	Mg dopantinCu2SnSe3: Ann-typeformerandapromoterofelectrical mobility upto387cm2 V 1 s 1	en_US
dc.type	Article	en_US