Abstract:
Mg-doped Cu2SnSe3 bulk materialswiththe(Cu2 xMgx)SnSe3 (Mg-x-CTSe) formulaat x¼0, 0.05,0.1,
0.15,and0.2werepreparedat550 1C for2hwithsolublesinteringaidsofSb2S3 and Te.Defectchemistry
wasstudiedbymeasuringstructuralandelectricalpropertiesofMg-dopedCu2SnSe3 as afunctionof
dopant concentration.Mg-x-CTSe pelletsshowp-typeat x¼0, 0.05and0.1andn-typeat x¼0.15and0.2.
The lowholeconcentrationof3.2 1017 cm 3 and highmobilityof387cm2 V 1 s 1 wereobtainedfor
(Cu2 xMgx)SnSe3 bulksat x¼0.1(5%Mg)ascomparedto2.2 1018 cm 3 and 91cm2 V 1 s 1 for the
undoped one.TheexplanationbasedupontheMg-to-Cuantisitedonordefectforthechangesin
electrical propertywasdeclared.AhighMgcontentforMg-x-CTSe at xZ0.1canleadtotheformationof
second phases.ThestudyinbulkMg-x-CTSe hasbeenbasedupondefectstatesandisconsistentand
supported bythedataofstructuralandelectricalproperties.
