Effects ofcopperexcessandcopperdeficiency onthestructuraland electrical propertiesofbulkCuxSnSe3 with x¼1.6–2.2

dc.contributor.author	Wubet, Walelign
dc.contributor.author	-HauKuo, Dong
dc.date.accessioned	2019-03-04T06:39:07Z
dc.date.available	2019-03-04T06:39:07Z
dc.date.issued	2015-02-24
dc.identifier.uri	http://hdl.handle.net/123456789/1992
dc.description.abstract	Effects oftheCuvariationonthemorphological,structural,andelectricalpropertiesofbulkCuxSnSe3 (CTSe) with x¼1.6–2.2 havebeeninvestigated.DenseCTSepelletswithgrainsof3–4 mm wereobtained aftersinteringat550 1C. AllCTSepelletsshowedadominantp-typebehavior.CTSeat x¼2.0 withahole concentration (np) of1.02 1018 cm 3 and Hallmobility(μ) of225cm2/V/s hadahighestconductivity (σ) of39S/cm.CTSeat x¼1.6with np of 5.0 1017 cm 3 and of11cm2/V/s hadalowestof0.90S/cm.The explanation,baseduponvacanciesandantisitedefects,forthechangesinelectricalpropertywiththeCu content issupportedbythedatafromlatticeparameter.ThestudyinbulkpropertiesofCTSeandits defects ishelpfulforselectingthesuitableabsorbercompositiontofabricatethin film solarcells. & 2015ElsevierInc.Allrightsreserved.	en_US
dc.language.iso	en	en_US
dc.subject	Keywords: Cu2SnSe3 Reactivesintering Microstructure Electrical property Intrinsic defect	en_US
dc.title	Effects ofcopperexcessandcopperdeficiency onthestructuraland electrical propertiesofbulkCuxSnSe3 with x¼1.6–2.2	en_US
dc.type	Article	en_US