Abstract:
Effects oftheCuvariationonthemorphological,structural,andelectricalpropertiesofbulkCuxSnSe3
(CTSe) with x¼1.6–2.2 havebeeninvestigated.DenseCTSepelletswithgrainsof3–4 mm wereobtained
aftersinteringat550 1C. AllCTSepelletsshowedadominantp-typebehavior.CTSeat x¼2.0 withahole
concentration (np) of1.02 1018 cm 3 and Hallmobility(μ) of225cm2/V/s hadahighestconductivity
(σ) of39S/cm.CTSeat x¼1.6with np of 5.0 1017 cm 3 and of11cm2/V/s hadalowestof0.90S/cm.The
explanation,baseduponvacanciesandantisitedefects,forthechangesinelectricalpropertywiththeCu
content issupportedbythedatafromlatticeparameter.ThestudyinbulkpropertiesofCTSeandits
defects ishelpfulforselectingthesuitableabsorbercompositiontofabricatethin film solarcells.
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