Abstract:
Mg-doped Cu2ZnSnSe4 (CZTSe) bulkmaterialswiththe(Cu2 xMgx)ZnSnSe4 formula at x¼0, 0.1,0.2,0.3,
and 0.4werepreparedat600 1C for2hwithsolublesinteringaidsofSb2S3 and Te.Defectchemistrywas
studied bymeasuringstructuralandelectricalpropertiesofMg-dopedCZTSeasafunctionofdopant
concentration. Exceptat x¼0, allMg-dopedCZTSepelletsshowedan n-type behavior.TheMg-doped
CZTSe pelletsshowedan n-type behavior. n-TypeMg-CZTSepelletsat x¼0.1showedthehighest
electrical conductivityof24.6Scm 1 and thenetholemobilityof120cm2 V 1 s 1, whiletheywere
11.8Scm 1 and 36.5cm2 V 1 s 1 for theundoped p-type CZTSe.Mgdopantisastrongpromoterof
electrical mobility.MgdopantbehavesasadonordefectinCZTSeata5%dopingcontent,butisalsoused
as anacceptoratahighcontentabove5%.MgdopinghasfurtherdevelopedCZTSeintoapromising
semiconductor.
