Abstract:
Cu2ZnSnSe4 (CZTSe) is a promising absorber layer material for thin film solar cells because of the non-toxicity
and abundance of the constituent elements. Ag-doped CZTSe bulks and thin films with the (Cu2−xAgx)ZnSnSe4
(Ag-x-CZTSe) formula at x= 0, 0.1, 0.2, 0.3, and 0.4 were prepared at 600 °C by reactive sintering and selenization.
We successfully demonstrated Ag-doped CZTSe materials without any different result between bulks
preparation and thin films devices. Defect chemistry was studied by measuring structural and electrical properties
of Ag-doped CZTSe as a function of dopant concentration. The enhanced of the device performance are
shown with the increasing of Ag content to the CZTSe. The films had a stack structure of Ag/ITO/ZnO/CdS/Ag-
CZTSe/Mo/soda-lime glass substrate. The efficiencies of Ag-x-CZTSe thin film solar cells at x=0, 0.1, 0.2, 0.3
and 0.4 were 1.90, 2.4, and 3.4, 3.1, and 2.9%, respectively.
