Abstract:
Silicon-doped (Cu2(Sn1 xSix)Se3 and titanium-doped(Cu2(Sn1 xTix)Se3 at x¼0, 0.05,0.1,0.15,and
0.2 werepreparedat550 1C for2hwithsolublesinteringaidsofvolatileSb2S3 and Te.Defectchemistry
wasstudiedbymeasuringstructuralandelectricalpropertiesofSi-dopedandTi-dopedCu2SnSe3 (CTSe)
as afunctionofdopantconcentration.Si-dopedCTSepelletsshow p-type at x¼0 and0.05and n-type at
x¼0.1,0.15,and0.2,whereasTi-dopedCTSepelletsshow p-type at x¼0, 0.05and0.1and n-type at
x¼0.15and0.2.Thelowestholeconcentrationof3.6 1017 cm 3 and thehighestmobilityof
1525cm2 V 1 s 1 wereobtainedfortheSi-doped(Cu2(Sn1 xSix)Se3 bulksat x¼0.1(10%Si),whilethey
were3.1 1017 cm 3 and 813cm2 V 1 s 1 for theTi-dopedCTSebulksat x¼0.15(15%Ti),ascompared
to 1.1 1018 cm 3 and 209cm2 V 1 s 1 for undopedone.Theexplanationsbaseduponantisitedefects
of Si-to-Sn,Ti-to-Sn,Cu-to-Sn,andSn-to-Cuforthechangesinelectricalpropertyweredeclared.The
study inbulkSi-dopedandTi-dopedCTSeisbasedupondefectstateandisconsistentandsupportedby
the dataofelectricalpropertyandlatticeparameter.
