Abstract:
Ag-doped CuSbS2 bulk materials with the (Cu1-xAgx)SbS2 (Ag-x-CAS) formula at x=0, 0.025, 0.05, 0.1, and 0.15
were prepared at 400 °C for 2 h by reactive sintering. Defect chemistry was studied by measuring structural and
electrical properties of Ag-doped CuSbS2 as a function of dopant concentration. All Ag-x-CAS pellets show ptype
conductivity. The low hole concentration of 1.17×1017 cm−3 and mobility of 1.11 cm2 V−1 s−1 were
obtained for (Cu1-xAgx)SbS2 bulks at x=0.025 (2.5% Ag) as compared to 3.78×1018 cm−3 and 20.11 cm2 V−1 s−1
for the undoped one. The explanation based upon the Ag-to-Cu defect for the changes in electrical property was
declared. The study in bulk Ag-x-CAS has been based upon defect states and is consistent and supported by the
data of structural and electrical properties.
