Effects ofsinteringtemperatureanddurationonthestructuraland electrical propertiesofCuBiS2 bulks

dc.contributor.author	Wubet, Walelign
dc.contributor.author	-HauKuo, Dong
dc.contributor.author	Abdullah, Hairus
dc.date.accessioned	2019-03-04T06:41:43Z
dc.date.available	2019-03-04T06:41:43Z
dc.date.issued	2015-07-14
dc.identifier.uri	http://hdl.handle.net/123456789/1993
dc.description.abstract	CuBiS2 bulkswerepreparedbyreactivesinteringthemixtureofCu2S andBi2S3 at 300,350,400,and 450 °C for2handatthesinteringtemperatureof400 °C for1,1.5,2,2.5,and3hunderacompensation disc ofCuSforatmosphericcontrol.Composition,structure,morphology,andelectricalpropertiesofthe sinteredbulkswereanalyzed.ThecompositionsofCu,Bi,andSdidnotchangeuntilthetemperature reached at450 °C.The highestelectricalconductivityof4.3Scm 1 and thehighestHallmobilityof 11.1cm2 V 1 s 1 wereobtainedforCuBiS2 sinteredat400 °C for2h.ThedeviationintheS/(CuþBi) ration causedthedegradationofelectricalproperties,thoughtheCuBiS2 remained asasinglephase. Therefore,CuBiS2, alessstudiedternarycopperbasedsulfide, isthe p-type semiconductorforpotential energy-relatedapplicationandneedstohaveagoodcontrolincomposition.	en_US
dc.language.iso	en	en_US
dc.subject	Keywords: CuBiS2 Reactivesintering Microstructure Electrical property	en_US
dc.title	Effects ofsinteringtemperatureanddurationonthestructuraland electrical propertiesofCuBiS2 bulks	en_US
dc.type	Article	en_US