Abstract:
Cu2(Sn1-xMgx)Se3 (Mg-x-CTSe) bulks at x = 0, 0.05, 0.1, 0.15, and 0.2 were prepared at
550 °C for 2 h. Defect chemistry was studied by measuring structural and electrical
properties of Mg-doped Cu2SnSe3 as a function of the dopant concentration. Mg-x-CTSe
pellets were p-type at x = 0, 0.05, and 0.1 and n-type at x = 0.15 and 0.2. The low hole
concentration of 3.18×1017 cm-3, high mobility of 387 cm2 V-1 s-1, and low conduction of
20 S cm-1 were obtained for Cu2(Sn1-xMgx)Se3 bulks at x= 0.1 (5% Mg), as compared to
1.06×1018 cm-3, 209 cm2 V-1 s-1, and 36 S cm-1 for undoped one. The explanation based
upon the Mg-to-Sn antisite defect for the changes in electrical properties was declared.
